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Autore/i: C. Bonavolontà, M. Valentino, M. de Lucia, M. Ambrosio, C. Aramo, S. Macis, I. Davoli, G. Castorina, F. Monforte, B. Spataro, M. Scarselli, S. Lupi< and A. Marcelli
Titolo: Characterization of the transport properties of MoO3 films on copper
Numero: INFN - 17-13/LNF
Data: 28-06-2017
PACS:
Pubblicato su:
PDF file: INFN-17-13-LNF.pdf
URL:
Abstract: In this study we report the first transport experiments performed on a series of thin films
of MoO3 grown on a thick Cu substrate. Electrical resistance measurements have been
performed for different film thickness as function of temperature down to ~20 K. Data
show, due to the copper substrate, that thin films of molybdenum trioxide also at low
temperature exhibits a metallic behaviour while for films with a thickness > 250 nm
the semiconducting behaviour start to prevail on the metallic one. Local morphological
properties and optical data are also showed to support the interpretation of the conductive
behaviour of these thin layers of molybdenum oxides.

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